电容器具有特别低的串联电阻和高脉冲强度；它们特别适用于GTO晶闸管和具有高均方根电流的低电感缓冲电路的阻尼。除了电容与体积之比非常好外，这些电容器还具有非常好的自愈特性，不会损失电容。它们非常低的自感使其适用于中频的大电流应用。通过带有内螺纹的坚固端子进行连接。电容器具有特别低的串联电阻和高脉冲强度；它们特别适用于具有高均方根电流的低电感缓冲电路。除了电容与体积之比非常好外，这些电容器还具有非常好的自愈特性，不会损失电容。通过M8螺纹的坚固螺柱进行连接。罐底部有两个支架，便于安装。电容器具有特别低的串联电阻和高脉冲强度，并提供非常高的电容体积比。它们的应用与我们经过充分验证的E 53系列非常相似。通过带有内螺纹的坚固端子进行连接。capacitors have a particularly low series resistance and high pulse strength and offer a very high ratio of capacitance to volume. Their application is very similar to our well-proven E 53-series. Connection is made through robust terminals with internal thread.
capacitors have a particularly low series resistance and high pulse strength; they are especially suited for the damping of GTO thyristors and low-inductance buffer circuits with high rms currents. Along with their very good ratio of capacitance to volume, these capacitors do also have very good self-healing characteristics without loss of capacitance. Their very low self- inductance makes them suitable for use in high-current applications with medium frequencies. Connection is made through robust terminals with internal thread.
E50.L11-504N40
E50.N13-904N50
E50.N23-185N50
E50.L11-354N40
E50.N13-764N50
E50.N25-155N50
E50.R16-155N10
E50.R23-215N10
E50.R29-295N10
E50.L11-304N40
E50.N13-504N50
E50.N13-584N50
E50.N23-115N50
E50.R16-115N10
E50.N25-125N50
E50.R23-175N11
E50.R29-205N10
E50.L11-204N40
E50.N13-374N50
E50.N15-424N50
E50.N23-654N50
50.N25-754N50
E50. 16-754N10
E50.R23 15N10
E50.R34-17 10
E50.R16-504N10
E50.R23-754N10
E50.R29-105N10
E61.A45-133P10
E61.A45-133P20
E61.A45-203P10
E61.A45-203P20
E61.A45-333P10
E61.A45-333P20
E61.A45-602P10
E61.A45-602P20
E61.A45-103P10
E61.A45-103P20
E61.G57-903P30
E61.A45-702P10
E61.A45-702P20
E61.G57-523P30
E61.G94P30
E61.G12-164P30
E61.B49-473P40
E61.B49-303P40
E61.B49-253P40
E61.B49-213P40
E61.B49-153P40
E61.B49-902P40
E61.B49-702P40